Piv nrog silicon-based fais fab semiconductors, SiC (silicon carbide) fais fab semiconductors muaj qhov zoo ntawm kev hloov zaus, poob, cua sov dissipation, miniaturization, thiab lwm yam.
Nrog rau qhov loj-scale zus tau tej cov silicon carbide inverters los ntawm Tesla, ntau lub tuam txhab kuj tau pib av silicon carbide khoom.
SiC yog qhov "tsim nyog", ua li cas hauv ntiaj teb tau tsim? Cov ntawv thov tam sim no yog dab tsi? Cia peb saib!
01 ☆ Hnub yug ntawm SiC
Ib yam li lwm lub zog semiconductors, SiC-MOSFET kev lag luam saw muaj xws lintev siv lead ua - substrate - epitaxy - tsim - manufacturing - ntim txuas.
Ntev siv lead ua
Thaum lub sij hawm ntev siv lead ua txuas, tsis zoo li qhov kev npaj ntawm Tira txoj kev siv los ntawm ib leeg siv lead ua silicon, silicon carbide feem ntau siv cov roj tsheb thauj mus los ntawm lub cev (PVT, tseem hu ua kev txhim kho Lly lossis noob siv lead ua sublimation txoj kev), kub kub tshuaj roj deposition txoj kev ( HTCVD. ) tshuaj ntxiv.
☆ Cov kauj ruam tseem ceeb
1. Carbonic khoom raw khoom;
2. Tom qab cua sov, cov khoom carbide ua roj;
3. Gas txav mus rau saum npoo ntawm cov noob siv lead ua;
4. Gas loj hlob nyob rau saum npoo ntawm cov noob siv lead ua mus rau hauv ib lub siv lead ua.
Daim duab Source: "Technical Point to disassemble PVT growth silicon carbide"
Kev sib txawv craftsmanship tau ua rau ob qho kev tsis zoo loj piv rau silicon puag:
Ua ntej, ntau lawm yog qhov nyuaj thiab tawm los tsawg.Qhov kub ntawm cov pa roj carbon-based roj theem loj hlob siab tshaj 2300 ° C thiab lub siab yog 350MPa. Tag nrho lub thawv tsaus yog nqa tawm, thiab nws yog ib qho yooj yim rau tov rau hauv impurities. Cov tawm los yog qis dua lub hauv paus silicon. Qhov loj ntawm txoj kab uas hla, qhov qis tawm los.
Qhov thib ob yog kev loj hlob qeeb.Kev tswj hwm ntawm PVT txoj kev yog qeeb heev, qhov ceev yog li ntawm 0.3-0.5mm / h, thiab nws tuaj yeem loj hlob 2cm hauv 7 hnub. Qhov siab tshaj plaws tuaj yeem loj hlob 3-5cm, thiab txoj kab uas hla ntawm cov siv lead ua ingot feem ntau yog 4 ntiv tes thiab 6 ntiv tes.
Silicon-based 72H tuaj yeem loj hlob mus rau qhov siab ntawm 2-3m, nrog cov kab uas hla feem ntau 6 ntiv tes thiab 8-nti tshiab muaj peev xwm tsim tau rau 12 ntiv tes.Yog li ntawd, silicon carbide feem ntau hu ua siv lead ua ingot, thiab silicon dhau los ua cov khoom siv lead ua.
Carbide silicon crystal ingots
Substrate
Tom qab siv lead ua ntev tiav, nws nkag mus rau hauv cov txheej txheem tsim khoom ntawm substrate.
Tom qab lub hom phiaj txiav, kev sib tsoo (kev sib tsoo zoo, kev sib tsoo zoo), polishing (mechanical polishing), ultra-precision polishing (chemical mechanical polishing), silicon carbide substrate tau txais.
Lub substrate tsuas yog ua silub luag haujlwm ntawm kev txhawb nqa lub cev, thermal conductivity thiab conductivity.Qhov nyuaj ntawm kev ua yog tias cov khoom siv silicon carbide siab, crispy, thiab ruaj khov hauv cov khoom siv tshuaj. Yog li ntawd, cov txheej txheem ua silicon-raws li cov txheej txheem tsis haum rau silicon carbide substrate.
Qhov zoo ntawm cov nyhuv txiav ncaj qha cuam tshuam rau kev ua tau zoo thiab kev siv kev ua haujlwm zoo (nqi) ntawm cov khoom siv silicon carbide, yog li nws yuav tsum yog me me, tuab tuab, thiab txiav qis.
Tam sim no,4-inch thiab 6-inch feem ntau yog siv cov khoom siv ntau txoj kab txiav,txiav silicon crystals rau hauv nyias slices nrog ib tug tuab ntawm tsis ntau tshaj 1 hli.
Multi-line txiav schematic daim duab
Nyob rau hauv lub neej yav tom ntej, nrog rau qhov loj ntawm carbonized silicon wafers, kev siv cov khoom yuav tsum tau nce, thiab technologies xws li laser slicing thiab txias sib cais yuav maj mam siv.
Hauv 2018, Infineon tau txais Siltectra GmbH, uas tsim cov txheej txheem tshiab hu ua txias tawg.
Piv nrog rau cov tsoos multi-wire txiav cov txheej txheem poob ntawm 1/4,Cov txheej txheem txias tawg tsuas yog poob 1/8 ntawm cov khoom siv silicon carbide.
Txuas ntxiv
Txij li cov khoom siv silicon carbide tsis tuaj yeem ua cov khoom siv hluav taws xob ncaj qha rau ntawm lub substrate, ntau yam khoom siv yuav tsum tau rau ntawm txheej txuas ntxiv.
Yog li ntawd, tom qab kev tsim cov substrate tiav, ib qho tshwj xeeb siv lead ua nyias zaj duab xis yog cog rau ntawm substrate los ntawm txoj kev txuas ntxiv.
Tam sim no, cov txheej txheem chemical gas deposition (CVD) feem ntau yog siv.
Tsim
Tom qab lub substrate yog tsim, nws nkag mus rau cov khoom tsim theem.
Rau MOSFET, qhov tseem ceeb ntawm cov txheej txheem tsim yog qhov tsim ntawm qhov zawj,ntawm ib sab kom tsis txhob ua txhaum cai patent(Infineon, Rohm, ST, thiab lwm yam., muaj patent layout), thiab ntawm qhov tod tesua tau raws li kev tsim khoom thiab cov nqi tsim khoom.
Wafer fabrication
Tom qab tsim cov khoom tiav, nws nkag mus rau theem tsim khoom wafer,thiab cov txheej txheem yog roughly zoo ib yam li cov silicon, uas feem ntau muaj cov nram qab no 5 kauj ruam.
☆ Kauj Ruam 1: Txhaj lub npog ntsej muag
Ib txheej ntawm silicon oxide (SiO2) zaj duab xis yog tsim, lub photoresist yog coated, photoresist qauv yog tsim los ntawm cov kauj ruam ntawm homogenization, raug, kev loj hlob, thiab lwm yam, thiab daim duab yog pauv mus rau oxide zaj duab xis los ntawm cov txheej txheem etching.
☆ Kauj Ruam 2: Ion implantation
Lub npog ntsej muag silicon carbide wafer tau muab tso rau hauv ib qho ion implanter, qhov twg txhuas ions raug txhaj rau hauv P-hom doping cheeb tsam, thiab annealed kom qhib lub implanted aluminium ions.
Cov oxide zaj duab xis raug tshem tawm, nitrogen ions raug txhaj rau hauv ib cheeb tsam tshwj xeeb ntawm P-hom doping cheeb tsam los tsim N-hom conductive cheeb tsam ntawm cov ntws thiab qhov chaw, thiab cov implanted nitrogen ions yog annealed los qhib lawv.
☆ Kauj Ruam 3: Ua daim phiaj
Ua daim phiaj. Nyob rau hauv cheeb tsam ntawm qhov chaw thiab ntws, lub rooj vag oxide txheej yog npaj los ntawm kev kub siab oxidation txheej txheem, thiab lub rooj vag electrode txheej yog muab tso rau hauv lub rooj vag tswj qauv.
☆ Kauj Ruam 4: Ua cov txheej txheem passivation
Passivation txheej yog ua. Deposit ib txheej passivation nrog zoo rwb thaiv tsev yam ntxwv los tiv thaiv interelectrode puas.
☆ Kauj Ruam 5: Ua cov kua dej ntws tawm
Ua qhov dej thiab qhov chaw. Cov txheej txheem passivation yog perforated thiab hlau yog sputtered los ua ib qho dej ntws thiab qhov chaw.
Duab Source: Xinxi Capital
Txawm hais tias muaj qhov sib txawv me ntsis ntawm cov txheej txheem qib thiab silicon raws li, vim yog cov yam ntxwv ntawm cov khoom siv silicon carbide,ion implantation thiab annealing yuav tsum tau nqa tawm nyob rau hauv ib tug kub kub ib puag ncig(txog 1600 ° C), qhov kub thiab txias yuav cuam tshuam rau lub lattice qauv ntawm cov khoom nws tus kheej, thiab qhov nyuaj tseem yuav cuam tshuam rau kev tawm los.
Ntxiv rau, rau MOSFET Cheebtsam,Qhov zoo ntawm lub rooj vag oxygen ncaj qha cuam tshuam rau kev txav mus los ntawm cov channel thiab kev cia siab ntawm lub rooj vag, vim tias muaj ob hom silicon thiab carbon atoms hauv cov khoom siv silicon carbide.
Yog li ntawd, yuav tsum muaj qhov tshwj xeeb qhov rooj nruab nrab txoj kev loj hlob (lwm lub ntsiab lus yog tias daim ntawv silicon carbide yog pob tshab, thiab txoj haujlwm sib dhos ntawm theem photolithography yog qhov nyuaj rau silicon).
Tom qab kev tsim khoom wafer tiav lawm, tus kheej nti yog txiav rau hauv ib lub nti liab qab thiab tuaj yeem ntim tau raws li lub hom phiaj. Cov txheej txheem ntau rau cov khoom siv sib cais yog TO pob.
650V CoolSiC™ MOSFETs hauv TO-247 pob
Yees duab: Infineon
Lub teb chaws tsheb muaj lub zog siab thiab cov cua sov uas yuav tsum tau ua, thiab qee zaum nws yog qhov tsim nyog los tsim cov choj txuas ncaj qha (ib nrab choj lossis tag nrho tus choj, lossis ncaj qha ntim nrog diodes).
Yog li ntawd, nws yog feem ntau ntim ncaj qha mus rau hauv modules los yog systems. Raws li tus naj npawb ntawm cov chips ntim rau hauv ib qho module, feem ntau daim ntawv yog 1 hauv 1 (BorgWarner), 6 hauv 1 (Infineon), thiab lwm yam, thiab qee lub tuam txhab siv ib lub raj sib txuas.
Borgwarner Viper
Txhawb nqa ob sab dej txias thiab SiC-MOSFET
Infineon CoolSiC™ MOSFET modules
Tsis zoo li silicon,silicon carbide modules ua haujlwm ntawm qhov kub siab dua, txog 200 ° C.
Ib txwm mos solder kub melting point kub yog tsawg, tsis tuaj yeem ua tau raws li qhov kub thiab txias. Yog li ntawd, silicon carbide modules feem ntau siv cov txheej txheem kub kub sintering vuam.
Tom qab lub module ua tiav, nws tuaj yeem siv rau hauv qhov system.
Tesla Model3 lub cev muaj zog tswj
Lub nti liab qab los ntawm ST, nws tus kheej tsim pob thiab lub zog tsav hluav taws xob
☆02 Daim ntawv thov xwm txheej ntawm SiC?
Nyob rau hauv automotive teb, cov khoom siv hluav taws xob feem ntau yog siv hauvDCDC, OBC, lub cev muaj zog inverters, hluav taws xob cua txias inverters, wireless charging thiab lwm yamuas yuav tsum tau AC / DC ceev hloov dua siab tshiab (DCDC mas ua raws li ib tug ceev hloov).
Yees duab: BorgWarner
Piv nrog cov khoom siv silicon, SIC cov ntaub ntawv muaj ntau duatseem ceeb avalanche tawg teb lub zog(3 × 106V / cm3)zoo dua thermal conductivity(49W / mK) thiabwider band sib txawv(3.26 eV).
Qhov dav ntawm qhov sib txawv band, qhov me me ntawm cov xau tam sim no thiab qhov ua tau zoo dua. Qhov zoo dua cov thermal conductivity, qhov siab dua tam sim no. Qhov muaj zog ntawm qhov tseem ceeb avalanche tawg teb yog, qhov hluav taws xob tsis kam ntawm lub cuab yeej tuaj yeem txhim kho.
Yog li ntawd, nyob rau hauv lub tshav pob ntawm on-board high voltage, MOSFETs thiab SBD npaj los ntawm silicon carbide cov ntaub ntawv los hloov cov uas twb muaj lawm silicon-based IGBT thiab FRD ua ke tuaj yeem txhim kho lub zog thiab kev ua haujlwm zoo,tshwj xeeb tshaj yog nyob rau hauv high zaus daim ntawv thov scenarios kom txo tau switching losses.
Tam sim no, nws feem ntau yuav ua tiav cov ntawv thov loj hauv lub cev muaj zog inverters, ua raws li OBC thiab DCDC.
800V voltage platform
Nyob rau hauv lub 800V voltage platform, qhov zoo ntawm high zaus ua rau cov lag luam inclined xaiv SiC-MOSFET tov. Yog li ntawd, feem ntau ntawm tam sim no 800V hluav taws xob tswj kev npaj SiC-MOSFET.
Platform-theem kev npaj muaj xws liniaj hnub E-GMP, GM Otenergy - chaw khaws khoom, Porsche PPE, thiab Tesla EPA.Tsuas yog Porsche PPE platform qauv uas tsis qhia meej nqa SiC-MOSFET (thawj qauv yog silica-based IGBT), lwm lub tsheb platforms txais SiC-MOSFET schemes.
Universal Ultra zog platform
800V qauv npaj yog ntau dua,Lub Great Phab Ntsa Salon hom Jiagirong, Beiqi ncej Fox S HI version, zoo tagnrho tsheb S01 thiab W01, Xiaopeng G9, BMW NK1, Changan Avita E11 hais tias nws yuav nqa 800V platform, ntxiv rau BYD, Lantu, GAC 'an, Mercedes-Benz, xoom Run, FAW Red Flag, Volkswagen kuj hais tias 800V tshuab hauv kev tshawb fawb.
Los ntawm qhov xwm txheej ntawm 800V xaj tau los ntawm Tier1 cov neeg xa khoom,BorgWarner, Wipai Technology, ZF, United Electronics, thiab Huichuantag nrho tshaj tawm 800V hluav taws xob tsav kev txiav txim.
400V voltage platform
Hauv 400V voltage platform, SiC-MOSFET feem ntau yog nyob rau hauv kev xav txog lub zog siab thiab lub zog ntom ntom thiab ua haujlwm siab.
Xws li Tesla Model 3\Y lub cev muaj zog uas tau tsim tawm tam sim no, lub zog siab tshaj plaws ntawm BYD Hanhou lub cev muaj zog yog li 200Kw (Tesla 202Kw, 194Kw, 220Kw, BYD 180Kw), NIO tseem yuav siv SiC-MOSFET cov khoom pib los ntawm ET7. thiab ET5 uas yuav teev tom qab. Peak zog yog 240Kw (ET5 210Kw).
Tsis tas li ntawd, los ntawm qhov kev xav ntawm kev ua haujlwm siab, qee lub tuam txhab tseem tab tom tshawb nrhiav qhov ua tau ntawm cov khoom siv dej nyab SiC-MOSFET.
Lub sij hawm xa tuaj: Plaub Hlis-08-2023
